1 tm file number 4560.5 caution: these devices are sensitive to electrostatic discharge; follow proper ic handling procedures. 1-888-intersil or 321-724-7143 | intersil and design is a trademark of intersil corporation. | copyright ?intersil corporation 2000 HS-117RH radiation hardened adjustable positive voltage regulator the radiation hardened HS-117RH is an adjustable positive voltage linear regulator capable of operating up to 40vdc. the voltage is adjustable from 1.2v to 37v with two external resistors. the device is capable of sourcing from 50ma to 1.25a peak (min). protection is provided by the on-chip thermal shutdown and output current limiting circuitry. the intersil HS-117RH has advantages over other industry standard types, in that circuitry is incorporated to minimize the effects of radiation and temperature on device stability. negligible low dose rate sensitivity is achieved through the use of vertical transistor geometries. constructed with the intersil dielectrically isolated rad hard silicon gate (rsg) process, the HS-117RH is immune to single event latch-up and has been speci?ally designed to provide highly reliable performance in harsh radiation environments. speci?ations for rad hard qml devices are controlled by the defense supply center in columbus (dscc). the smd numbers listed here must be used when ordering. detailed electrical speci?ations for the HS-117RH are contained in smd 5962-99547. a ?ot-link?is provided on our homepage for downloading. www.intersil.com/spacedefense/space.asp pinout hs9s-117rh (to-257aa flange mount) top view features electrically screened to dssc smd # 5962-99547 qml quali?d per mil-prf-38535 requirements radiation environment - 300 krad (si) (max) - latch-up immune - negligible low dose rate effects sensitivity superior temperature stability overtemperature and overcurrent/voltage protection applications switch mode dc - dc power conversion housekeeping supplies for motors power supplies for robotic control hsye-117rh (smd.5 clcc) bottom view note: no current jedec outline for the smd.5 package. refer to smd for package dimensions. the to-257 is a totally isolated metal package. adjust out in 3 2 1 ordering information ordering number internal mkt. number temp. range ( o c) 5962f9954701vxc hs9s-117rh-q -55 to 125 5962f9954701qxc hs9s-117rh-8 -55 to 125 5962f9954701/vyc hsye-117rh-q -55 to 125 5962f9954701/qyc hsye-117rh-8 -55 to 125 hs9s-117rh/proto hs9s-117rh/proto -55 to 125 hsye-117rh/proto hsye-117rh/proto -55 to 125 1 - adjust 2 - in 3 - out 1 2 3 data sheet november 2000
2 all intersil semiconductor products are manufactured, assembled and tested under iso9000 quality systems certi?ation. intersil semiconductor products are sold by description only. intersil corporation reserves the right to make changes in circuit design and/or spec ifications at any time with- out notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furnished by intersil is b elieved to be accurate and reliable. however, no responsibility is assumed by intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of th ird parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of intersil or its subsidiari es. for information regarding intersil corporation and its products, see web site www.intersil.com die characteristics die dimensions 2616 m x 2794 m (103 mils x 110 mils) 483 m 25.4 m (19 mils 1 mil) interface materials glassivation type: silox (sio 2 ) thickness: 8.0k ? 1.0k ? top metallization type: alsicu thickness: 16.0k ? 2k ? substrate radiation hardened silicon gate, dielectric isolation backside finish gold assembly related information substrate potential unbiased (di) additional information worst case current density <2.0 x 10 5 a/cm 2 transistor count 95 metallization mask layout HS-117RH v out v out v in v in adj v outk HS-117RH
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